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IXTT48P20P - Power MOSFET

Download the IXTT48P20P datasheet PDF. This datasheet also covers the IXTH48P20P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z z z 1.6mm (0.062 in. ) from case for 10s Plastic body for 10s Mounting torque (TO-247, TO-3P) Mounting force (PLUS220) TO-247 TO-268 300 260 1.13 / 10 11..65 / 2.5..14.6 6 5 International standard packages Avalanche Rated Rugged PolarPTM process Low package inductance - easy to drive and to protect.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH48P20P-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTT100N25P N-Channel MOSFET
IXTT10P50 P-Channel MOSFET
IXTT110N10P N-Channel MOSFET
IXTT11P50 P-Channel MOSFET
IXTT140N10P Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH48P20P IXTT48P20P VDSS ID25 RDS(on) = = ≤ - 200V - 48A 85mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings - 200 - 200 ±20 ±30 - 48 -144 - 48 2.5 10 462 - 55 ... +150 150 - 55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. N/lb. g g G (TAB) D S TO-268 (IXTT) G S (TAB) G = Gate S = Source D = Drain TAB = Drain Features: z z z z 1.6mm (0.062 in.