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DE150-102N02A
RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching
VDSS ID25
= 1000 V
=
2A
Symbol Test Conditions
Maximum Ratings
RDS(on) = 7.8 Ω
VDSS VDGR VGS VGSM ID25 IDM IAR EAR
dv/dt
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0
1000 V 1000 V
±20 V ±30 V
2A 12 A 1.5 A
6 mJ 3 V/ns
>200 V/ns
PDC
= 200W
PDC PDHS PDAMB RthJC RthJHS Symbol
VDSS VGS(th) IGSS IDSS
RDS(on)
gfs TJ TJM Tstg TL Weight
200 W
DRAIN
Tc = 25°C Derate .7W/°C above 25°C
Tc = 25°C
105
W GATE
3.5 W
0.71 C/W 1.41 C/W
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min. typ.
DE150-102N02A Datasheet
