Overview: DE150-102N02A
RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS ID25 = 1000 V = 2A Symbol Test Conditions Maximum Ratings RDS(on) = 7.8 Ω VDSS VDGR VGS VGSM ID25 IDM IAR EAR
dv/dt TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 1000 V 1000 V
±20 V ±30 V
2A 12 A 1.5 A
6 mJ 3 V/ns
>200 V/ns PDC = 200W PDC PDHS PDAMB RthJC RthJHS Symbol
VDSS VGS(th) IGSS IDSS
RDS(on)
gfs TJ TJM Tstg TL Weight 200 W DRAIN Tc = 25°C Derate .7W/°C above 25°C
Tc = 25°C 105 W GATE 3.5 W 0.71 C/W 1.41 C/W Test Conditions Characteristic Values
TJ = 25°C unless otherwise specified min. typ. max. VGS = 0 V, ID = 3 ma 1000 V VDS = VGS, ID = 4 ma 2.5 4.5 V VGS = ±20 VDC, VDS = 0 ±100 nA VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C 50 µA 500 µA VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% 7.8 Ω VDS = 15 V, ID = 0.5ID25, pulse test 0.
