DE150-102N02A Description
DE150-102N02A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS ID25 = 1000 V = 2A Symbol Test Conditions Maximum Ratings RDS(on) = 7.8 Ω VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt TJ = 25°C to 150°C TJ = 25°C to.
DE150-102N02A Key Features
- Isolated Substrate
- high isolation voltage (>2500V)
- excellent thermal transfer
- Increased temperature and power
- IXYS advanced low Qg process
- Low gate charge and capacitances
- easier to drive
- faster switching
- Low RDS(on)
- Very low insertion inductance (<2nH)