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DSEE6-06CC - Epitaxial Diode

Key Features

  • λ λ λ λ λ λ λ TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA Mounting force typical 50 2500 2 1165 / 2.411 N / lb Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCE TECHNICAL INFORMATION DSEE 6-06CC HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface IFAV = 6 A VRRM = 600 V trr = 20 ns VRRMc V 600 VRRM V 300 Type ISOPLUS 220 E153432 DSEE 6-06CC 1 2 3 Symbol IFRMS IFAVM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight Conditions TC = 150°C; rectangular, d = 0.5 TVJ = 25°C; non-repetitive IAS = 0.8 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive Maximum Ratings 20 6 0.1 0.1 -40...+175 175 -40...+150 A A mJ A °C °C °C W V~ g Isolated back surface* Features λ λ λ λ λ λ λ λ TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA Mounting force typical 50 2500 2 11...65 / 2.4...