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IXA220I650NA - XPT IGBT

Description

Quantity Code No.

Features

  • / Advantages:.
  • Easy paralleling due to the positive temperature coefficient of the on-state voltage.
  • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 2x Ic.
  • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).

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Full PDF Text Transcription

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XPT IGBT Single IGBT Part number IXA220I650NA IXA220I650NA VCES I C25 VCE(sat) = = = tentative 650 V 255 A 1.6 V (G) 2 (C) 3 (E) 1+4 Backside: isolated Features / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec.
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