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IXD75IF650NA - XPT IGBT

Features

  • / Advantages:.
  • Easy paralleling due to the positive temperature coefficient of the on-state voltage.
  • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 2x Ic.
  • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).
  • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage.

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Full PDF Text Transcription

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XPT IGBT Trench IGBT (medium speed) Copack Part number IXD75IF650NA IXD75IF650NA VCES I C25 VCE(sat) = = = tentative 650 V 75 A 1.5 V (G) 1 2 (C) 3 (E) Features / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec.
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