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IXFH180N20X3 - Power MOSFET

Download the IXFH180N20X3 datasheet PDF. This datasheet also covers the IXFT180N20X3HV variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (IXFT180N20X3HV-IXYS.pdf) that lists specifications for multiple related part numbers.

Overview

Preliminary Technical Information X3-Class HiPerFETTM Power MOSFET IXFT180N20X3HV IXFH180N20X3 VDSS = ID25 =  RDS(on) 200V 180A 7.5m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT..HV) Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268HV TO-247 Maximum Ratings 200 V 200 V 20 V 30 V 180 A 160 A 320 A 90 A 2.2 J 20 V/ns 735 W -55 ...

+150 C 150 C -55 ...

+150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in 4 g 6 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min.

Key Features

  • International Standard Packages.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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