IXFH50N30Q3 Description
+150 C C C 300 °C 260 °C 1.13 / 10 4.0 6.0 Nm/lb.in.
IXFH50N30Q3 Key Features
- Low Intrinsic Gate Resistance
- International Standard Packages
- Low Package Inductance
- Fast Intrinsic Rectifier
- Low RDS(on) and QG
- High Power Density
- Easy to Mount
- Space Savings