Overview: PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA 7N80P IXFI 7N80P IXFP 7N80P VDSS = 800 ID25 = 7 RDS(on) ≤ 1.44 t rr ≤ 250 V A Ω ns Symbol
VDSS VDGR
VGS V
GSM
ID25 IDM I
AR
EAR EAS
dv/dt
PD TJ TJM Tstg
TL TSOLD
M d
Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω
TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque (TO-220, TO-3P)
TO-220 TO-263 Maximum Ratings
800 V 800 V
± 30 V ± 40 V
7A 18 A
4A 20 mJ 300 mJ
10 V/ns 200
-55 ... +150 150
-55 ... +150 W
°C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in. 3g 2.5 g TO-263 (IXFA) G S (TAB) Leaded TO-263 (IXFI) G D S
TO-220 (IXFP) (TAB) G DS (TAB) G = Gate S = Source D = Drain TAB = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250μA Characteristic Values Min. Typ. Max.
800 V VGS(th) VDS = VGS, ID = 1 mA 3.0 5.0 V IGSS VGS = ±30 V, VDS = 0 V ±100 nA IDSS RDS(on) VDS = VDSS VGS = 0 V TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 25 μA 500 μA
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