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PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFA 7N80P IXFI 7N80P IXFP 7N80P
VDSS = 800
ID25 =
7
RDS(on) ≤ 1.44
t rr
≤ 250
V A Ω ns
Symbol
VDSS VDGR
VGS V
GSM
ID25 IDM I
AR
EAR EAS
dv/dt
PD TJ TJM Tstg
TL TSOLD
M d
Weight
Test Conditions
TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
Continuous Transient
TC = 25°C TC = 25°C, pulse width limited by TJM
T C
= 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque (TO-220, TO-3P)
TO-220 TO-263
Maximum Ratings
800 V 800 V
± 30 V ± 40 V
7A 18 A
4A 20 mJ 300 mJ
10 V/ns
200
-55 ... +150 150
-55 ... +150
W
°C °C °C
300 °C 260 °C
1.13/10 Nm/lb.in.
3g 2.
IXFI7N80P Datasheet
