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IXFK180N25T - GigaMOS Power MOSFET

Download the IXFK180N25T datasheet PDF. This datasheet also covers the IXFX180N25T variant, as both devices belong to the same gigamos power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z z z z 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.13/10 20..120 /4.5..27 10 6 International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, No.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFX180N25T_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFK180N07 N-Channel MOSFET Transistor Inchange Semiconductor
IXFK180N10 Power MOSFETs IXYS Corporation
IXFK100N10 Power MOSFET IXYS Corporation
IXFK100N25 Power MOSFET IXYS Corporation
IXFK102N30P Polar MOSFETs IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFK180N25T GigaMOS Power MOSFET
IXFK180N07 Power MOSFET
IXFK180N15P Polar HiPerFET Power MOSFET
IXFK100N65X2 Power MOSFET
IXFK120N20 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK180N25T IXFX180N25T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 250V 180A 12.9mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 250 250 ± 20 ± 30 180 160 500 40 3 20 1390 -55 ... +150 150 -55 ... +150 V V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.in. N/lb.