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IXFK32N90P Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

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Overview

Advance Technical Information PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK32N90P IXFX32N90P VDSS ID25 RDS(on) = 900V = 32A < 300mΩ TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247 Maximum Ratings 900 900 ±30 ±40 32 80 16 2 V V V V A A A J 15 960 -55 to +150 150 -55 to +150 300 260 1.13/10 20..120 /4.5..27 10 6 V/ns W °C °C °C °C °C Nm/lb.in.

N/lb.

Key Features

  • z Low RDS(on) and QG z Avalanche Rated z Low Package Inductance z Fast Intrinsic Rectifier Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5.
  • ID25, Note 1 Characteristic Values Min. Typ. Max. 900 V 3.5 6.5 V ±200 nA 25 μA 2 mA 300 mΩ z High Power Density z Easy to Mount z Space Savings.

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