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IXFN260N17T - GigaMOS Power MOSFET

Features

  • International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density.

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Datasheet preview – IXFN260N17T

Datasheet Details

Part number IXFN260N17T
Manufacturer IXYS
File Size 148.34 KB
Description GigaMOS Power MOSFET
Datasheet download datasheet IXFN260N17T Datasheet
Additional preview pages of the IXFN260N17T datasheet.

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Full PDF Text Transcription

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Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN260N17T RDS(on) ≤ ≤ trr VDSS ID25 = = 170V 245A 6.5mΩ 200ns miniBLOC, SOT-227 E153432 S Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 170 170 ±20 ±30 245 200 700 100 3 20 1090 -55 ... +175 175 -55 ... +175 V V V V A A A A J V/ns W °C °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in.
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