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HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET
IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
G D
VDSS 900 V 900 V
ID (cont) 26 A 25 A
RDS(on) 0.30 W 0.33 W
trr 250 ns 250 ns
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TJ VISOL Md Weight Symbol Test Conditions 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS IISOL£ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 26N90 25N90 26N90 25N90 26N90 25N90
S
S
Maximum Ratings 900 900 ±20 ±30 26 25 104 100 26 25 64 3 5 600 -55 ...
IXFN26N90 Datasheet
