Overview: HiPerFETTM Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated High dV/dt, Low trr IXFN280N07 Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IAR EAR EAS
dV/dt
PD TJ TJM Tstg
T L
VISOL
Md
Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient
TC = 25°C Terminal current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C 1.6mm (0.062 in.) from case for 10s 50/60Hz, RMS IISOL ≤ 1mA t = 1min t = 1s Mounting torque Terminal connection torque Maximum Ratings 70 70 V V ±20 V ±30 V 280 100 1120 A A A 180 A 60 mJ 3J 20 V/ns 600 W -55 ... +150 150
-55 ... +150
300 °C °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/ 11.5 Nm/lb.in. Nm/lb.in. 30 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 120A, Note 1 Characteristic Values Min. Typ. Max.
70 V 2.0 4.0 V ±200 nA 100 μA 2 mA 5 mΩ VDSS = ID25 = ≤RDS(on) trr ≤ 70V 280A 5mΩ 250ns miniBLOC, SOT-227 B (IXFN) E153432
S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
