IXFN280N085 Description
+150 2500 3000 1.5/13 1.3/11.5 30 °C °C °C V~ V~ Nm/lb.in. g Symbol BVDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless Min. otherwise specified) Typ.
IXFN280N085 Key Features
- International standard package
- miniBLOC, with Aluminium nitride
- Low RDS(on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Avalanche rated
- Guaranteed FBSOA
- Low package inductance
- Fast intrinsic Rectifier
- Easy to mount
- Space savings