Overview: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN280N085 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol
VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt
Pd TJ TJM Tstg VISOL
Md
Weight Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient
TC = 25°C, Chip capability External Lead Current Limit
TC = 25°C, pulse width limited by TJM
TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 50/60 Hz, RMS t = 1min IISOL ≤ 1mA t = 1s Mounting torque Terminal connection torque Maximum Ratings
85 85
±20 ±30 V V
V V 280 200 1120 A A A 200 A 4J 5 V/ns
700 W -55 ... +150 150
-55 ... +150
2500 3000
1.5/13 1.3/11.5
30 °C °C °C
V~ V~
Nm/lb.in. Nm/lb.in.
g Symbol
BVDSS VGS(th) IGSS IDSS
RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless Min. otherwise specified) Typ. Max. VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C VGS = 10V, ID = 100A, Note 1 85 2.0 4.0
±200
100 2
4.4 V V nA μA mA mΩ VDSS = 85V
ID25 = 280A ≤RDS(on) 4.
