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IXFN280N085 - Power MOSFET

Features

  • International standard package.
  • miniBLOC, with Aluminium nitride isolation.
  • Low RDS(on).

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Full PDF Text Transcription

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HiPerFETTM Power MOSFETs Single Die MOSFET IXFN280N085 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt Pd TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C, Chip capability External Lead Current Limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 50/60 Hz, RMS t = 1min IISOL ≤ 1mA t = 1s Mounting torque Terminal connection torque Maximum Ratings 85 85 ±20 ±30 V V V V 280 200 1120 A A A 200 A 4J 5 V/ns 700 W -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 30 °C °C °C V~ V~ Nm/lb.in. Nm/lb.in.
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