Overview: HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Preliminary Data Symbol
V DSS
V DGR
VGS VGSM ID25 I
DM
IAR EAR EAS dv/dt
PD TJ TJM T
stg
T J
VISOL
Md
Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C T C = 25°C, pulse width limited by T JM TC = 25°C TC = 25°C TC = 25°C I
S ≤ I,
DM di/dt ≤ 100 A/µs, V DD ≤ V, DSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS t = 1 min IISOL ≤ 1 mA t=1s Mounting torque Terminal connection torque IXFN 90N30
D G V DSS
ID25
RDS(on) = 300 V = 90 A = 33 mΩ trr ≤ 250 ns S S Maximum Ratings 300 V 300 V ±20 V ±30 V 90 A 360 A 90 A 64 mJ 3 J 5 V/ns miniBLOC, SOT-227 B (IXFN) E153432
S G S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source 560 W -55 ... +150 °C 150 °C -55 ... +150 °C - °C 2500 V~ 3000 V~ 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in.
