IXFN90N30 - Power MOSFET

Features

International standard package.
miniBLOC, with Aluminium nitride isolation.
Low RDS (on).

IXFN90N30 Power MOSFET by IXYS - Datasheet Preview — Datasheet preview – IXFN90N30

Datasheet Details

Part number	IXFN90N30
Manufacturer	IXYS (now Littelfuse)
File Size	317.16 KB
Description	Power MOSFET
Datasheet	IXFN90N30 Datasheet
Additional preview pages of the IXFN90N30 datasheet.

📁 Similar Datasheet

IXFN100N10S1 - HiPerFET Power MOSFETs (IXYS Corporation)
IXFN100N10S2 - HiPerFET Power MOSFETs (IXYS Corporation)
IXFN100N10S3 - HiPerFET Power MOSFETs (IXYS Corporation)
IXFN100N20 - HiPerFET Power MOSFETs (IXYS Corporation)
IXFN100N25 - N-Channel MOSFET (IXYS Corporation)
IXFN100N50P - Power MOSFET (IXYS Corporation)
IXFN100N50Q3 - HiperFET Power MOSFET Q3-Class (IXYS Corporation)
IXFN102N30P - Polar MOSFETs (IXYS Corporation)
IXFN106N20 - HiPerFET Power MOSFETs (IXYS Corporation)
IXFN110N60P3 - Polar3 HiPerFET Power MOSFET (IXYS Corporation)

Other Datasheets by IXYS

IXFN90N170SK - SiC Power MOSFET
IXFN90N85X - Power MOSFET
IXFN100N65X2 - Power MOSFET
IXFN110N85X - Power MOSFET
IXFN120N20 - Power MOSFET
IXFN120N20P - PolarHT Power MOSFET
IXFN120N65X2 - Power MOSFET
IXFN130N90SK - SiC Power MOSFET

Full PDF Text Transcription

Click to expand full text

HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Symbol V DSS V DGR VGS VGSM ID25 I DM IAR EAR EAS dv/dt PD TJ TJM T stg T J VISOL Md Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C T C = 25°C, pulse width limited by T JM TC = 25°C TC = 25°C TC = 25°C I S ≤ I, DM di/dt ≤ 100 A/µs, V DD ≤ V, DSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.

Published: Aug 16, 2016 |