IXFN90N30 Description
HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Symbol V DSS V DGR VGS VGSM ID25 I DM IAR EAR EAS dv/dt PD TJ TJM T stg T J VISOL Md Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; +150 °C - °C 2500 V~ 3000 V~ 1.5/13 Nm/lb.in.
IXFN90N30 Key Features
- International standard package
- miniBLOC, with Aluminium nitride
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS)
- Low package inductance
- Fast intrinsic Rectifier
- ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %