Overview: X-Class HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN90N85X
D
G S
S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt
TJ TJM Tstg VISOL
Md
Weight Test Conditions
TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M
Continuous Transient
TC = 25C TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C 50/60 Hz, RMS t = 1 minute IISOL 1mA t = 1 second Mounting Torque Terminal Connection Torque Maximum Ratings 850 V 850 V 30 V 40 V 90 A 180 A 45 A 4 J 1200 W 50 V/ns -55 ... +150 C 150 C -55 ... +150 C 2500 V~ 3000 V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 45A, Note 1 Characteristic Values Min. Typ. Max. 850 V 3.5 5.
