Overview: Preliminary Technical Information TrenchTM HiperFETTM Power MOSFETs IXFT94N30T IXFH94N30T VDSS = 300V
ID25 = 94A ≤ RDS(on) 36mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD
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TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 300 V 300 V ±20 V ±30 V 94 A 235 A 47 A 500 mJ 890 W 20 V/ns -55 to +150 °C +150 °C -55 to +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 4 g 6 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 300 V 3.0 5.
