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IXFX180N07 - Power MOSFET

Download the IXFX180N07 datasheet PDF. This datasheet also covers the IXFK180N07 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z International Standard Packages z Avalanche Rated z Low Intrinsic Gate Resistance z Low Package Inductance z Fast Intrinsic Rectifier z Low RDS(on) and QG Advantages z High Power Density z Easy to Mount z Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFK180N07-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFX180N10 Power MOSFETs IXYS Corporation
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IXFX20N120 HiPerFET Power MOSFETs IXYS Corporation
IXFX20N120P Power MOSFET IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFX180N25T GigaMOS Power MOSFET
IXFX180N25T GigaMOS Power MOSFET
IXFX100N65X2 Power MOSFET
IXFX120N20 Power MOSFET
IXFX120N25 HiPerFET Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HiperFETTM Power MOSFETs IXFK180N07 IXFX180N07 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier D G S Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247 Maximum Ratings 70 V 70 V ±20 V ±30 V 180 A 160 A 720 A 180 A 3 J 5 V/ns 568 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 260 1.13/10 20..120 /4.5..27 10 6 °C °C Nm/lb.in. N/lb.