Overview: GigaMOSTM TrenchT2 HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK360N15T2 IXFX360N15T2 VDSS = ID25 = RDS(on) trr 150V 360A 4.0m 150ns TO-264 (IXFK) Symbol
VDSS VDGR
VGSS VGSM
ID25 IL(RMS) IDM
IA EAS
PD
dV/dt
TJ TJM Tstg
TL TSOLD
Md FC
Weight Test Conditions
TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M
Continuous Transient Maximum Ratings 150 V 150 V 20 V 30 V TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 175°C 360 160 900
100 TBD
1670
20
-55 ... +175 175
-55 ... +175 A A A
A J
W
V/ns
C C C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Torque (TO-264) Mounting Force (PLUS247) 1.13/10 20..120 /4.5..27 Nm/lb.in. N/lb. TO-264 PLUS247 10 g 6 g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 150 V 2.5 5.0 V 200 nA 50 A 5 mA 4.
