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Advance Technical Data
HiPerFASTTM IGBT with Diode
IXGK 50N60B2D1 IXGX 50N60B2D1
B2-Class High Speed IGBTs
V CES
IC25 VCE(sat) t
fi(typ)
= 600 V = 75 A = 2.0 V = 65 ns
Symbol
Test Conditions
VCES V
CGR
VGES VGEM
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GE
=
1
MΩ
Continuous
Transient
IC25 TC = 25°C (limited by leads)
IC110
TC = 110°C
IF110 TC = 110°C (50N60B2D1 Diode)
ICM TC = 25°C, 1 ms
SSOA (RBSOA)
P C
TJ TJM Tstg Md Weight
VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V
T C
= 25°C
Mounting torque, TO-264
TO-264 PLUS247
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600 V 600 V
±20 V ±30 V
75 A 50 A 38 A 200 A
ICM = 80
A
400 W
-55 ... +150 150
-55 ... +150
°C °C °C
1.13/10 Nm/lb.
IXGK50N60B2D1 Datasheet
