Full PDF Text Transcription for IXGK50N60B2D1 (Reference)
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IXGK50N60B2D1. For precise diagrams, and layout, please refer to the original PDF.
Advance Technical Data HiPerFASTTM IGBT with Diode IXGK 50N60B2D1 IXGX 50N60B2D1 B2-Class High Speed IGBTs V CES IC25 VCE(sat) t fi(typ) = 600 V = 75 A = 2.0 V = 65 ns Sy...
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IGBTs V CES IC25 VCE(sat) t fi(typ) = 600 V = 75 A = 2.0 V = 65 ns Symbol Test Conditions VCES V CGR VGES VGEM TJ = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MΩ Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C IF110 TC = 110°C (50N60B2D1 Diode) ICM TC = 25°C, 1 ms SSOA (RBSOA) P C TJ TJM Tstg Md Weight VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V T C = 25°C Mounting torque, TO-264 TO-264 PLUS247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 600 V 600 V ±20 V ±30 V 75 A 50 A 38 A 200 A ICM = 80 A 400 W -55 ... +150 150 -55 ..
IXGK50N60B2D1 Datasheet
