IXGK50N60B2D1 Overview
+150 °C °C °C 1.13/10 Nm/lb.in.
IXGK50N60B2D1 Key Features
- High frequency IGBT and
- High current handling capability
- MOS Gate turn-on for drive simplicity
- Fast Recovery Epitaxial Diode (FRED)
IXGK50N60B2D1 Details
| Part number | IXGK50N60B2D1 |
|---|---|
| Datasheet | IXGK50N60B2D1-IXYS.pdf |
| File Size | 491.70 KB |
| Manufacturer | IXYS (now Littelfuse) |
| Description | IGBT |
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