IXKP10N60C5M Description
ID = 0.34 mA VDS = 600 V; VDS = 100 V f = 1 MHz TVJ = 25°C TVJ = 125°C VGS = 0 to 10.
IXKP10N60C5M Key Features
- Fast CoolMOS power MOSFET
- 4th generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped inductive switching (UIS)
- Fully isolated package