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Advanced Technical Information
IXKP 10N60C5M
CoolMOS Power MOSFET
Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
ID25 = 5.4 A
VDSS
= 600 V
RDS(on) max = 0.385 Ω
D
G S
TO-220 ABFP
G D S
MOSFET
Symbol
VDSS VGS
ID25 ID90 EAS EAR dV/dt
Conditions TVJ = 25°C
TC = 25°C TC = 90°C
single pulse repetitive
ID = 3.4 A; TC = 25°C
MOSFET dV/dt ruggedness VDS = 0...480 V
Maximum Ratings 600 V ± 20 V
5.4 A 3.7 A 225 mJ 0.3 mJ 50 V/ns
Symbol
RDSon VGS(th) IDSS
IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V; ID = 5.2 A VDS = VGS; ID = 0.
IXKP10N60C5M Datasheet
