IXKP10N60C5M
IXKP10N60C5M is CoolMOS Power MOSFET manufactured by IXYS.
Advanced Technical Information
IXKP 10N60C5M
Cool MOS Power MOSFET
Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
ID25 = 5.4 A
VDSS
= 600 V
RDS(on) max = 0.385 Ω
TO-220 ABFP
MOSFET
Symbol
VDSS VGS
ID25 ID90 EAS EAR d V/dt
Conditions TVJ = 25°C
TC = 25°C TC = 90°C single pulse repetitive
ID = 3.4 A; TC = 25°C
MOSFET d V/dt ruggedness VDS = 0...480 V
Maximum Ratings 600 V ± 20 V
5.4 A 3.7 A 225 m J 0.3 m J 50 V/ns
Symbol
RDSon VGS(th) IDSS
IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf Rth JC
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max.
VGS = 10 V; ID = 5.2 A VDS = VGS; ID = 0.34 m A VDS = 600 V; VGS = 0 V
VGS = ± 20 V; VDS = 0 V VGS = 0 V; VDS = 100 V f = 1 MHz
TVJ = 25°C TVJ = 125°C
VGS = 0 to 10 V; VDS = 400 V; ID = 5.2 A
VGS = 10 V; VDS = 400 V ID = 5.2 A; RG = 4.3 Ω
2.5 3...
