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IXKP13N60C5M Datasheet Coolmos Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: IXKP 13N60C5M CoolMOS™ 1) Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge Preliminary data D G S ID25 = 6.5 A VDSS = 600 V R =DS(on) max 0.3 Ω TO-220 FP G D S MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = 4.4 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0...480 V Maximum Ratings 600 V ± 20 V 6.5 A 4.5 A 290 mJ 0.44 mJ 50 V/ns Symbol RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VGS = 10 V; ID = 6.6 A VDS = VGS; ID = 0.44 mA VDS = 600 V; VGS = 0 V VGS = ± 20 V; VDS = 0 V VGS = 0 V; VDS = 100 V f = 1 MHz TVJ = 25°C TVJ = 125°C VGS = 0 to 10 V; VDS = 400 V; ID = 6.6 A VGS = 10 V; VDS = 400 V ID = 6.6 A; RG = 4.3 Ω 270 2.5 3 10 1100 60 22 5 7.6 10 5 40 5 300 mΩ 3.5 V 1 µA µA 100 nA pF pF 30 nC nC nC ns ns ns ns 3.

Key Features

  • fast CoolMOS™ 1) power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness.
  • Enhanced total power density.

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