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IXKP 13N60C5M
CoolMOS™ 1) Power MOSFET
Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
Preliminary data
D
G S
ID25 = 6.5 A
VDSS
= 600 V
R =DS(on) max 0.3 Ω
TO-220 FP
G D
S
MOSFET
Symbol
VDSS VGS
ID25 ID90 EAS EAR dV/dt
Conditions TVJ = 25°C
TC = 25°C TC = 90°C
single pulse repetitive
ID = 4.4 A; TC = 25°C
MOSFET dV/dt ruggedness VDS = 0...480 V
Maximum Ratings 600 V ± 20 V
6.5 A 4.5 A 290 mJ 0.44 mJ 50 V/ns
Symbol
RDSon VGS(th) IDSS
IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V; ID = 6.6 A VDS = VGS; ID = 0.
IXKP13N60C5M Datasheet
