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TrenchPTM Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
IXTY18P10T IXTA18P10T IXTP18P10T
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220
Maximum Ratings -100 -100
V V
±15 V ±25 V
-18 A - 60 A
-18 A 200 mJ
83 W
-55 ... +150 150
-55 ... +150
°C °C °C
300 260
1.13 / 10
°C °C Nm/lb.in.
0.35 g 2.50 g 3.
IXTA18P10T Datasheet
