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IXTA76P10T - Power MOSFET

Download the IXTA76P10T datasheet PDF. This datasheet also covers the IXTP76P10T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages.
  • Avalanche Rated.
  • Extended FBSOA.
  • Fast Intrinsic Diode.
  • Low RDS(ON) and QG Advantages.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTP76P10T_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTA76P10T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTA76P10T. For precise diagrams, and layout, please refer to the original PDF.

TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM...

View more extracted text
IXTH76P10T D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-268HV TO-247 Maximum Ratings - 100 V - 100 V 15 V 25 V - 76 A - 230 A - 38 A 1 J 298 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 /10 Nm/lb.in. 2.5 g 3.0 g 4.0 g 6.

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