IXTH3N100P Overview
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N100P IXTP3N100P IXTH3N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous.
IXTH3N100P Key Features
- International Standard Packages
- Low RDS(ON) and QG
- Avalanche Rated
- Low Package Inductance
- High Power Density
- Easy to Mount
- Space Savings