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IXTH3N100P - MOSFET

Download the IXTH3N100P datasheet PDF. This datasheet also covers the IXTA3N100P variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA3N100P-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTH3N120 Power MOSFET IXYS Corporation
IXTH300N04T2 N-Channel MOSFET INCHANGE
IXTH30N50 Power MOSFET IXYS Corporation
IXTH30N50 N-Channel MOSFET INCHANGE
IXTH30N50L N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTH300N04T2 Power MOSFET
IXTH30N45 N-Channel MOSFET
IXTH30N50L Power MOSFET
IXTH30N50L2 Power MOSFET
IXTH30N50P PolarHV Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N100P IXTP3N100P IXTH3N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 1000 20 30 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 3 6 3 200 10 125 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 TO-247 2.5 g 3.0 g 6.