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PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA12N50P IXTI12N50P IXTP12N50P
VDSS = ID25 = ≤RDS(on)
500V 12A 500mΩ
TO-263 (IXTA)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dV/dt
PD TJ TJM Tstg TL TSOLD Md Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062) from case for 10s Plastic body for 10s
Mounting torque Mounting force
(TO-220) (TO-263)
TO-263 Leaded TO-263 TO-220
Maximum Ratings 500 500
V V
±30 V ±40 V
12 A 30 A
12 A 600 mJ
10 V/ns
200 W
-55 ... +150 150
-55 ... +150
300
260
1.13 / 10 10..65 / 2.2..14.6
2.5 2.8 3.0
°C °C °C
°C °C
Nm/lb.in. N/lb.
IXTI12N50P Datasheet
