• Part: IXTI12N50P
  • Description: Power MOSFET
  • Manufacturer: IXYS
  • Size: 153.45 KB
Download IXTI12N50P Datasheet PDF
IXTI12N50P page 2
Page 2
IXTI12N50P page 3
Page 3

Datasheet Summary

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA12N50P IXTI12N50P IXTP12N50P VDSS = ID25 = ≤RDS(on) 500V 12A 500mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062) from case for 10s Plastic body for 10s Mounting torque Mounting force (TO-220) (TO-263) TO-263 Leaded TO-263 TO-220 Maximum Ratings 500 500 ±30 V ±40 V 12 A 30 A 12 A 600 mJ 10 V/ns 200 W -55 ... +150 150 -55 ... +150 1.13...