IXTN200N10L2
IXTN200N10L2 is Power MOSFET manufactured by IXYS.
Advance Technical Information
Linear L2TM Power MOSFET w/ Extended
FBSOA
VDSS ID25
= =
≤RDS(on)
100V 178A
11mΩ
N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated mini BLOC, SOT-227 E153432
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
Continuous Transient
TC = 25°C TC = 25°C, Pulse Width Limited by TJM
TC = 25°C TC = 25°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s
50/60 Hz, RMS t = 1 Minute
IISOL ≤ 1m A t = 1 Second
Mounting Torque
Terminal Connection Torque
Maximum Ratings 100 100
±20 V ±30 V
178 A 500 A
100 A 5J
830 W
-55 ... +150 150
-55 ......
