IXTN200N10T
IXTN200N10T is Power MOSFET manufactured by IXYS.
Preliminary Technical Information
Trench MVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS = 100V
ID25 = 200A RDS(on) ≤ 5.5mΩ
Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL VISOL
Md
Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient
TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062 in.) from case for 10s
50/60 Hz, RMS IISOL ≤ 1m A
Mounting torque Terminal connection torque t = 1min t = 1s
Maximum Ratings
±20
± 30
-55 ... +175
°C
°C
-55 ... +175
°C
°C
2500 3000
1.5/13 1.3/11.5
V~ V~
Nm/lb.in. Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise...
