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Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTN200N10T
VDSS = 100V
ID25 = 200A RDS(on) ≤ 5.5mΩ
Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL VISOL
Md
Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient
TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062 in.) from case for 10s
50/60 Hz, RMS IISOL ≤ 1mA
Mounting torque Terminal connection torque
t = 1min t = 1s
Maximum Ratings
100
V
100
V
±20
V
± 30
V
200
A
100
A
500
A
40
A
1.5
J
550
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
2500 3000
1.5/13 1.3/11.5
V~ V~
Nm/lb.in. Nm/lb.in.
IXTN200N10T Datasheet
