Datasheet Details
| Part number | IXTN200N10T |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 162.31 KB |
| Description | Power MOSFET |
| Download | IXTN200N10T Download (PDF) |
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| Part number | IXTN200N10T |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 162.31 KB |
| Description | Power MOSFET |
| Download | IXTN200N10T Download (PDF) |
|
|
|
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTN200N10T VDSS = 100V ID25 = 200A RDS(on) ≤ 5.5mΩ Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting torque Terminal connection torque t = 1min t = 1s Maximum Ratings 100 V 100 V ±20 V ± 30 V 200 A 100 A 500 A 40 A 1.5 J 550 W -55 ...
+175 °C 175 °C -55 ...
+175 °C 300 °C 2500 3000 1.5/13 1.3/11.5 V~ V~ Nm/lb.in.
| Part Number | Description |
|---|---|
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| IXTN120N25 | Power MOSFET |
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| IXTN170P10P | Power MOSFET |
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