IXTN102N65X2 Datasheet | IXYS

Advance Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 50/60 Hz, RMS, t = 1minute IISOL 1m A, t = 1s Mounting Torque for Base Plate Terminal Connection Torque Maximum Ratings 650 650  30 V  40 V 76 A 204 A 25 A 3J 595 W 50 V/ns -55 ... +150 150 -55 ... +150 C C C 2500 3000 1.5/13 1.3/11.5 V~ V~ Nm/lb.in Nm/lb.in g VDSS = ID25 = RDS(on)  650V 76A 30m mini BLOC E153432 G = Gate S = Source D =...