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IXTN102N65X2 Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

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Overview

Advance Technical Information X2-Class Power MOSFET IXTN102N65X2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Mounting Torque for Base Plate Terminal Connection Torque D G S S Maximum Ratings 650 650 V V  30 V  40 V 76 A 204 A 25 A 3J 595 W 50 V/ns -55 ...

+150 150 -55 ...

+150 C C C 2500 3000 1.5/13 1.3/11.5 30 V~ V~ Nm/lb.in Nm/lb.in g VDSS = ID25 = RDS(on)  650V 76A 30m miniBLOC E153432 S G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal.

Key Features

  • International Standard Package.
  • miniBLOC with Aluminum Nitride Isolation.
  • LAovwalaQnGche Rated.
  • Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250μA IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 125C RDS(on) VGS = 10V, ID = 51A, Note 1 Characteristic Values Min. Typ. Max. 650 V 3.0 5.0 V 100 nA 25 A 350 A 30 m.
  • H.

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