IXTN120N25 Overview
+150 300 0.7/6 10 W °C °C °C °C Nm/lb.in.
IXTN120N25 Key Features
- Low RDS (on) HDMOSTM process -Rugged polysilicon gate cell structure -Internationalstandardpackage -Fast switching times
| Part number | IXTN120N25 |
|---|---|
| Datasheet | IXTN120N25-IXYS.pdf |
| File Size | 574.66 KB |
| Manufacturer | IXYS (now Littelfuse) |
| Description | Power MOSFET |
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+150 300 0.7/6 10 W °C °C °C °C Nm/lb.in.
See all IXYS (now Littelfuse) datasheets
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