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High Current MegaMOSTMFET
N-Channel Enhancement Mode Preliminary Data Sheet
IXTK 120N25
VDSS
ID25
RDS(on)
=
= =
250 V
120 A 20 mΩ
Symbol Test conditions
VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt
PD TJ TTJsMtg TL Md Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264
Maximum ratings
250 V 250 V
±20 V ±30 V
120 A 75 A
480 A 90 A
80 mJ 4.0 J
10 V/ns
TO-264 AA (IXTK)
G D S
D (TAB)
G = Gate S = Source
D = Drain Tab = Drain
730
-55 ... +150 150
-55 ... +150
300
0.
IXTN120N25 Datasheet
