IXTN120N25 Description
+150 300 0.7/6 10 W °C °C °C °C Nm/lb.in.
IXTN120N25 Key Features
- Low RDS (on) HDMOSTM process -Rugged polysilicon gate cell structure -Internationalstandardpackage -Fast switching times
- Part: IXTN120N25
- Manufacturer: IXYS
- Size: 574.66 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXTN102N65X2 | Power MOSFET |
| IXTN15N100 | N-Channel Enhancement Mode |
| IXTN170P10P | Power MOSFET |
| IXTN200N10L2 | Power MOSFET |
| IXTN200N10T | Power MOSFET |