Datasheet Details
| Part number | IXTN120N25 |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 574.66 KB |
| Description | Power MOSFET |
| Download | IXTN120N25 Download (PDF) |
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| Part number | IXTN120N25 |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 574.66 KB |
| Description | Power MOSFET |
| Download | IXTN120N25 Download (PDF) |
|
|
|
High Current MegaMOSTMFET N-Channel Enhancement Mode Preliminary Data Sheet IXTK 120N25 VDSS ID25 RDS(on) = = = 250 V 120 A 20 mΩ Symbol Test conditions VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TTJsMtg TL Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 Maximum ratings 250 V 250 V ±20 V ±30 V 120 A 75 A 480 A 90 A 80 mJ 4.0 J 10 V/ns TO-264 AA (IXTK) G D S D (TAB) G = Gate S = Source D = Drain Tab = Drain 730 -55 ...
+150 150 -55 ...
+150 300 0.7/6 10 W °C °C °C °C Nm/lb.in.
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