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IXTN170P10P - Power MOSFET

Features

  • International Standard Package.
  • miniBLOC, with Aluminium Nitride Isolation.
  • Rugged PolarPTM Process.
  • High Current Handling Capability.
  • Fast Intrinsic Diode.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTN170P10P D G S S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 50/60 Hz, RMS t = 1 minute IISOL  1mA t = 1 second Mounting Torque Terminal Connection Torque Maximum Ratings -100 V -100 V 20 V 30 V -170 A - 510 A -170 A 3.5 J 10 890 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 30 V/ns W C C C V~ V~ Nm/lb.in. Nm/lb.in.
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