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IXTP130N15X4 - Power MOSFET

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Overview

X4-Class Power MOSFETTM Advance Technical Information IXTP130N15X4 IXTH130N15X4 VDSS = ID25 = RDS(on) 150V 130A 8.5m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-220 TO-247 Maximum Ratings 150 150 V V 20 V 30 V 130 A 240 A 65 A 800 mJ 10 V/ns 400 W -55 ...

+150 150 -55 ...

+150 C C C 300 °C 260 °C 1.13 / 10 Nm/lb.in 3g 6g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min.

Key Features

  • International Standard Packages.
  • LAovwalaRnDcSh(OeN) RanadteQd G.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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