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PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV 36N50P IXTV 36N50PS
VDSS =
ID25 = ≤ RDS(on)
500 36
170
V A mΩ
TO-3P (IXTQ)
Symbol
V DSS
VDGR
VGS VGSM
I
D25
IDM IAR E
AR
EAS
dv/dt
PD TJ TJM Tstg
TL TSOLD
Md
FC
Weight
Test Conditions
T J
= 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
Continuous
Transient
T C
= 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
T C
= 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 3 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque(TO-247)
Mounting force (PLUS220)
TO-247 TO-268 PLUS220 TO-3P
Maximum Ratings
500
V
500
V
G DS
±30
V
±40
V TO-247 (IXTH)
36
A
108
A
36
A
50
mJ
1.
IXTT36N50P Datasheet
