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IXTX400N15X4 - Power MOSFET

Download the IXTX400N15X4 datasheet PDF. This datasheet also covers the IXTK400N15X4 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (IXTK400N15X4-IXYS.pdf) that lists specifications for multiple related part numbers.

Overview

Advance Technical Information X4-Class Power MOSFETTM N-Channel Enhancement Mode Avalanche Rated IXTK400N15X4 IXTX400N15X4 VDSS = ID25 = RDS(on)  150V 400A 3.1m TO-264P (IXTK) Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient 150 V 150 V  20 V  30 V TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 400 160 900 200 3 1500 10 -55 ...

+175 175 -55 ...

+175 A A A A J W V/ns C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Torque (TO-264) Mounting Force (PLUS247) 1.13/10 20..120 /4.5..27 Nm/lb.in N/lb TO-264 PLUS247 10 g 6g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 1mA IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 150C RDS(on) VGS = 10V, ID = 100A, Note 1 Characteristic Values Min.

Key Features

  • International Standard Packages.
  • Low QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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