Datasheet Summary
Advance Technical Information
TrenchT2TM GigaMOS TM Power MOSFET
IXTK600N04T2 IXTX600N04T2
VDSS ID25
= =
RDS(on) ≤
40V 600A 1.5mΩ
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
TO-264 (IXTK)
Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
Maximum Ratings 40 40 ± 20 600 160 1600 200 3 1250 -55 ... +175 175 -55 ... +175 V V V A A A A J W °C °C °C °C °C Nm/lb.in. N/lb. g g
G D S Tab
PLUS247 (IXTX)
Tab
G = Gate S = Source
D...