Overview: TrenchPTM Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated IXTY18P10T IXTA18P10T IXTP18P10T Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220 Maximum Ratings -100 -100 V V ±15 V ±25 V -18 A - 60 A -18 A 200 mJ 83 W -55 ... +150 150
-55 ... +150 °C °C °C 300 260
1.13 / 10 °C °C Nm/lb.in. 0.35 g 2.50 g 3.00 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ± 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. -100 V - 2.5 - 4.
