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IXTY18P10T - Power MOSFETs

Key Features

  • z International Standard Packages z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTY18P10T IXTA18P10T IXTP18P10T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220 Maximum Ratings -100 -100 V V ±15 V ±25 V -18 A - 60 A -18 A 200 mJ 83 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 1.13 / 10 °C °C Nm/lb.in. 0.35 g 2.50 g 3.