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IXTY48P05T - Power MOSFET

Key Features

  • z International Standard Packages z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density.

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TrenchPTM Power MOSFETs Preliminary Technical Information IXTY48P05T IXTA48P05T IXTP48P05T VDSS = ID25 = ≤RDS(on) - 50V - 48A 30mΩ P-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic body for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ± 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = 0.