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IXYF30N170CV1 - High Voltage IGBT

Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 2500V~ Electrical Isolation.
  • High Blocking Voltage.
  • High Peak Current Capability.
  • Low Saturation Voltage Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 1700 V VGE(th) IC = 250A, VCE = VGE 3.0 5.0 V ICES VCE = 0.8.
  • VCES, VGE = 0V Note 3, TJ = 125C 25 A 4 mA IGES VCE = 0V, VGE = 2.

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High Voltage XPTTM IGBT w/ Diode (Electrically Isolated Tab) Advance Technical Information IXYF30N170CV1 VCES = 1700V IC110 = 20A V CE(sat)  4.0V tfi(typ) = 95ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1700 V 1700 V ±20 V ±30 V TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 2.7 Clamped Inductive Load 36 A 20 A 20 A 260 A ICM = 120 A 1360 V TC = 25°C 230 W -55 ... +175 °C 175 °C -55 ... +175 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force 20..120 / 4.5..27 Nm/lb.in.
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