IXYH10N170C Description
+175 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6 g TO-247 AD G C E G = Gate E = Emitter Tab C = Collector Tab = Collector.
IXYH10N170C Key Features
- High Voltage Package
- High Blocking Voltage
- Low Saturation Voltage
- Low Gate Drive Requirement
- High Power Density