• Part: IXYH10N170C
  • Description: High Voltage IGBT
  • Manufacturer: IXYS
  • Size: 216.57 KB
Download IXYH10N170C Datasheet PDF
IXYS
IXYH10N170C
IXYH10N170C is High Voltage IGBT manufactured by IXYS.
Features - High Voltage Package - High Blocking Voltage - Low Saturation Voltage Advantages - Low Gate Drive Requirement - High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 10A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 5.0 V 10 A 1 m A 100 n A 4.1 V Applications - Switch-Mode and Resonant-Mode Power Supplies - Uninterruptible Power Supplies (UPS) - Laser Generators - Capacitor Discharge Circuits - AC Switches © 2017 IXYS CORPORATION, All Rights Reserved. DS100783A(5/17) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 10A, VCE = 10V, Note...