IXYH10N170C
IXYH10N170C is High Voltage IGBT manufactured by IXYS.
Features
- High Voltage Package
- High Blocking Voltage
- Low Saturation Voltage
Advantages
- Low Gate Drive Requirement
- High Power Density
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES
VCE = VCES, VGE = 0V
TJ = 150C
IGES
VCE = 0V, VGE = 20V
VCE(sat)
IC = 10A, VGE = 15V, Note 1 TJ = 150C
Characteristic Values Min. Typ. Max.
5.0 V
10 A 1 m A
100 n A
4.1 V
Applications
- Switch-Mode and Resonant-Mode Power Supplies
- Uninterruptible Power Supplies (UPS)
- Laser Generators
- Capacitor Discharge Circuits
- AC Switches
© 2017 IXYS CORPORATION, All Rights Reserved.
DS100783A(5/17)
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs
IC = 10A, VCE = 10V, Note...