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IXYH10N170CV1 - High Voltage IGBT

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IXYS

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IXYH10N170CV1 High Voltage IGBT by IXYS - Datasheet Preview — Datasheet preview – IXYH10N170CV1

Datasheet Details

Part number	IXYH10N170CV1
Manufacturer	IXYS
File Size	224.72 KB
Description	High Voltage IGBT
Datasheet	IXYH10N170CV1 Datasheet
Additional preview pages of the IXYH10N170CV1 datasheet.

Product details

Features

High Voltage Package.
High Blocking Voltage.
Low Saturation Voltage Advantages.
Low Gate Drive Requirement.
High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 10A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 1700 V 3.0 5.0 V 25 A 5 mA 100 nA 3.6 4.1.

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Published: Feb 11, 2025 |