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IXYN75N65C3D1 - IGBT

Features

  • International Standard Package.
  • miniBLOC, with Aluminium Nitride Isolation.
  • 2500V~ Isolation Voltage.
  • Optimized for 20-60kHz Switching.
  • Square RBSOA.
  • Avalanche Rated.
  • Short Circuit Capability.
  • High Current Handling Capability.
  • Anti-Parallel Fast Diode Advantages.
  • High Power Density.
  • Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES.

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Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Diode IXYN75N65C3D1 Extreme Light Punch through IGBT for 20-60kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TVISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C 50/60Hz IISOL 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque E Maximum Ratings 650 650 ±20 ±30 V V V V 150 A 75 A 60 A 360 A 30 A 300 mJ ICM = 150 VCE VCES 8 A μs 600 -55 ... +175 175 -55 ... +175 2500 3000 1.5/13 1.
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