GWM70-01P2 Description
Advanced Technical Information GWM 70-01P2 VDSS = 100 V ID25 = 70 A RDSon typ.
GWM70-01P2 Key Features
- MOSFETs in trench technology
- low RDSon
- optimized intrinsic reverse diode
- package
- high level of integration
- high current capability
- auxiliary terminals for MOSFET control
- terminals for soldering or welding connections
- isolated DCB ceramic base plate with optimized heat transfer
- 250 A °C °C V~ N