IXFX180N10 Description
+150 300 0.9/6 V V V V A A A A mJ J V/ns W °C °C °C °C Nm/lb.in. 6 10 g g PLUS 247TM (IXFX) G D (TAB) D TO-264 AA (IXFK) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain.
IXFX180N10 Key Features
- International standard packages
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- easy to drive and to protect
- Fast intrinsic rectifier
- ID25 Note 1