ICE6N70 Overview
Preliminary Data Sheet ICE6N70 ICE6N70 N-Channel Enhancement Mode MOSFET.
ICE6N70 Key Features
- Low rDS(on)
- Ultra Low Gate Charge
- High dv/dt capability
- High Unclamped Inductive Switching (UIS) capability
- High peak current capability
- Increased transconductance performance
- Optimized design for high performance power systems
- Specifications subject to change
- 730 3 0.1
- 0.65 2.0 4