Datasheet Details
| Part number | 2SA1072 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.91 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1072_InchangeSemiconductor.pdf |
|
|
Overview: isc Silicon PNP Power Transistor 2SA1072.
| Part number | 2SA1072 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.91 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1072_InchangeSemiconductor.pdf |
|
|
|
·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·plement to Type 2SC2522 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency power amplifier ·Audio power amplifiers ·Switching regulators ·DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 120 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SA1072 | SILICON HIGH SPEED POWER TRANSISTOR | Fujitsu Media Devices Limited |
 |
2SA1072 | (2SA1072 / 2SA1073) SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1073 | POWER TRANSISTOR |
| 2SA1074 | POWER TRANSISTOR |
| 2SA1075 | POWER TRANSISTOR |
| 2SA1076 | POWER TRANSISTOR |
| 2SA1077 | POWER TRANSISTOR |
| 2SA1078 | POWER TRANSISTOR |
| 2SA1079 | POWER TRANSISTOR |
| 2SA1001 | Silicon PNP Power Transistor |
| 2SA1003 | Silicon PNP Power Transistor |
| 2SA1007 | Silicon PNP Power Transistor |