Datasheet Details
| Part number | 2SA1077 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.77 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1077_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1077.
| Part number | 2SA1077 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.77 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1077_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Fast Switching Speed ·Wide Area of Safe Operation ·plement to Type 2SC2527 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers ·Switching regulators ·DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -10 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SA1077 | SILICON HIGH SPEED POWER TRANSISTOR | Fujitsu Media Devices Limited |
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2SA1077 | SILICON POWER TRANSISTOR | SavantIC |
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| 2SA1001 | Silicon PNP Power Transistor |
| 2SA1003 | Silicon PNP Power Transistor |
| 2SA1007 | Silicon PNP Power Transistor |