Datasheet Details
| Part number | 2SA1075 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.67 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1075_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1075.
| Part number | 2SA1075 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.67 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1075_InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·plement to Type 2SC2525 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·switching regulators ·DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 120 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：.iscsemi.
isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1075 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter –Base Breakdown Voltage IC=- 50uA ;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SA1075 | SILICON HIGH SPEED POWER TRANSISTOR | Fujitsu Media Devices Limited |
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2SA1075 | (2SA1075 / 2SA1076) SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1072 | POWER TRANSISTOR |
| 2SA1073 | POWER TRANSISTOR |
| 2SA1074 | POWER TRANSISTOR |
| 2SA1076 | POWER TRANSISTOR |
| 2SA1077 | POWER TRANSISTOR |
| 2SA1078 | POWER TRANSISTOR |
| 2SA1079 | POWER TRANSISTOR |
| 2SA1001 | Silicon PNP Power Transistor |
| 2SA1003 | Silicon PNP Power Transistor |
| 2SA1007 | Silicon PNP Power Transistor |