2SA1075 datasheet by Inchange Semiconductor.
| Part number | 2SA1075 |
|---|---|
| Datasheet | 2SA1075_InchangeSemiconductor.pdf |
| File Size | 181.67 KB |
| Manufacturer | Inchange Semiconductor |
| Description | POWER TRANSISTOR |
|
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·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·plement to Type 2SC2525 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·switching regulators ·DC-DC converter applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SA1075 | SILICON HIGH SPEED POWER TRANSISTOR | Fujitsu Media Devices Limited |
 |
2SA1075 | (2SA1075 / 2SA1076) SILICON POWER TRANSISTOR | SavantIC |
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| 2SA1076 | POWER TRANSISTOR |
| 2SA1077 | POWER TRANSISTOR |
| 2SA1078 | POWER TRANSISTOR |
| 2SA1079 | POWER TRANSISTOR |
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| 2SA1003 | Silicon PNP Power Transistor |
| 2SA1007 | Silicon PNP Power Transistor |
