Datasheet Details
| Part number | 2SA1079 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.05 KB |
| Description | POWER TRANSISTOR |
| Download | 2SA1079 Download (PDF) |
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| Part number | 2SA1079 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.05 KB |
| Description | POWER TRANSISTOR |
| Download | 2SA1079 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2529 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers and drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -2 A 25 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1079 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
RBE= ∞ -160 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1μA;
isc Silicon PNP Power Transistor 2SA1079.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1079 | SILICON POWER TRANSISTOR | SavantIC |
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