Datasheet Details
| Part number | 2SA1141 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.41 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1141_InchangeSemiconductor.pdf |
|
|
Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1141 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.41 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1141_InchangeSemiconductor.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- V(BR)CEO= -115V(Min) ·Good Linearity of hFE ·plement to Type 2SC2681 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -115 V VCEO Collector-Emitter Voltage -115 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A 2.0 W 100 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1141 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -4.5A;
IB= -0.45A VBE(on) Base-Emitter On Voltage IC= -4.5A;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SA1141 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1142 | POWER TRANSISTOR |
| 2SA1146 | POWER TRANSISTOR |
| 2SA1147 | POWER TRANSISTOR |
| 2SA1102 | POWER TRANSISTOR |
| 2SA1103 | POWER TRANSISTOR |
| 2SA1104 | POWER TRANSISTOR |
| 2SA1105 | POWER TRANSISTOR |
| 2SA1106 | POWER TRANSISTOR |
| 2SA1107 | POWER TRANSISTOR |
| 2SA1108 | POWER TRANSISTOR |