Collector-Emitter Breakdown Voltage-
V(BR)CEO= -115V(Min)
Good Linearity of hFE
Complement to Type 2SC2681
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Audio frequency power amplifier
High frequency power amplifier
AB
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isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -115V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2681 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-115
V
VCEO
Collector-Emitter Voltage
-115
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-15
A
2.0 W
100
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SA1141
isc website：www.iscsemi.
2SA1141 Datasheet
