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2SA1142 - POWER TRANSISTOR

General Description

Low Collector Saturation Voltage High voltage,fT Complement to Type 2SC2682 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA

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isc Silicon PNP Power Transistor 2SA1142 DESCRIPTION ·Low Collector Saturation Voltage ·High voltage,fT ·Complement to Type 2SC2682 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -100 mA 1.2 w 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.