Datasheet Details
| Part number | 2SA1142 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 173.99 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1142_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1142.
| Part number | 2SA1142 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 173.99 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1142_InchangeSemiconductor.pdf |
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·Low Collector Saturation Voltage ·High voltage,fT ·plement to Type 2SC2682 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -100 mA 1.2 w 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -50mA;
IB= -5mA VBE(sat) Collector-Emitter Saturation Voltage IC= -50mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SA1142 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1141 | POWER TRANSISTOR |
| 2SA1146 | POWER TRANSISTOR |
| 2SA1147 | POWER TRANSISTOR |
| 2SA1102 | POWER TRANSISTOR |
| 2SA1103 | POWER TRANSISTOR |
| 2SA1104 | POWER TRANSISTOR |
| 2SA1105 | POWER TRANSISTOR |
| 2SA1106 | POWER TRANSISTOR |
| 2SA1107 | POWER TRANSISTOR |
| 2SA1108 | POWER TRANSISTOR |